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| BFR92A / BFR92AR / BFR92AW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 Features * * * * * High power gain Low noise figure e3 High transition frequency Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC SOT-23 2 1 3 SOT-23 Applications Wide band amplifier up to GHz range. 3 1 2 SOT-323 Mechanical Data Typ: BFR92A Case: SOT-23 Plastic case Weight: approx. 8.0 mg Pinning: 1 = Collector, 2 = Base, 3 = Emitter Typ: BFR92AR Case: SOT-23 Plastic case Weight: approx. 8.0 mg Pinning: 1 = Collector, 2 = Base, 3 = Emitter Typ: BFR92AW Case: SOT-323 Plastic case Weight: approx. 6.0 mg Pinning: 1 = Collector, 2 = Base, 3 = Emitter 2 3 19150 Electrostatic sensitive device. Observe precautions for handling. Parts Table Part BFR92A BFR92AR BFR92AW Ordering code BFR92AGELB-GS08 BFR92ARGELB-GS08 BFR92AW-GS08 +P2 +P5 WP2 Marking Remarks Tape and Reel Tape and Reel Tape and Reel SOT-23 SOT-23 SOT-323 Package Document Number 85033 Rev. 1.4, 29-Apr-05 www.vishay.com 1 BFR92A / BFR92AR / BFR92AW Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Tamb 60 C Test condition Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 20 15 2 30 200 150 - 65 to + 150 Unit V V V mA mW C C Maximum Thermal Resistance Parameter Junction ambient 1) 1) Test condition Symbol RthJA Value 450 Unit K/W on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 m Cu Electrical DC Characteristics Tamb = 25 C, unless otherwise specified Parameter Collector-emitter cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Test condition VCE = 20 V, VBE = 0 VCB = 10 V, IE = 0 VEB = 2 V, IC = 0 IC = 1 mA, IB = 0 Symbol ICES ICBO IEBO V(BR)CEO hFE 15 65 100 150 Min Typ. Max 100 100 10 Unit A nA A V DC forward current transfer ratio VCE = 10 V, IC = 14 mA Electrical AC Characteristics Tamb = 25 C, unless otherwise specified Parameter Transition frequency Collector-base capacitance Collector-emitter capacitance Emitter-base capacitance Noise figure Power gain Test condition VCE = 10 V, IC = 14 mA, f = 500 MHz VCB = 10 V, f = 1 MHz VCE = 10 V, f = 1 MHz VEB = 0.5 V, f = 1 MHz VCE = 10 V, IC = 2 mA, ZS = 50 , f = 800 MHz VCE = 10 V, ZS = 50 , ZL = ZLopt, IC = 14 mA, f = 800 MHz VCE = 10 V, IC = 14 mA, dIM = 60 dB, f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 VCE = 10 V, IC = 14 mA, f = 800 MHz Symbol fT Ccb Cce Ceb F Gpe Min Typ. 6 0.3 0.15 0.65 1.8 16 Max Unit GHz pF pF pF dB dB Linear output voltage - two tone intermodulation test Third order intercept point V1 = V2 120 mV IP3 24 dBm www.vishay.com 2 Document Number 85033 Rev. 1.4, 29-Apr-05 BFR92A / BFR92AR / BFR92AW Vishay Semiconductors Common Emitter S-Parameters VCE/V IC/mA IC/mA f/MHz f/MHz 100 300 500 800 2 1000 1200 1500 1800 2000 100 300 500 800 5 5 1000 1200 1500 1800 2000 100 300 500 800 10 1000 1200 1500 1800 2000 100 300 500 800 14 1000 1200 1500 1800 5 2000 LIN MAG 0.902 0.761 0.577 0.399 0.339 0.303 0.284 0.272 0.278 0.783 0.534 0.351 0.220 0.188 0.175 0.189 0.200 0.214 0.641 0.362 0.229 0.148 0.136 0.133 0.160 0.183 0.198 0.566 0.301 0.195 0.137 0.129 0.132 0.162 0.183 0.204 S11 ANG -17.5 -50.2 -76.8 -105.3 -121.9 -138.1 -163.3 172.9 159.4 -27.2 -69.6 -97.6 -128.3 -145.2 -162.0 175.1 153.5 140.6 -38.1 -85.8 -116.7 -151.6 -168.5 176.8 158.3 139.4 130.4 -44.3 -94.2 -127.0 -164.6 -179.9 167.7 153.1 136.6 127.4 LIN MAG 6.38 5.51 4.48 3.28 2.79 2.45 2.07 1.79 1.65 12.84 9.12 6.41 4.28 3.53 3.04 2.51 2.16 1.98 19.40 11.09 7.27 4.69 3.83 3.27 2.70 2.30 2.12 22.20 11.58 7.43 4.78 3.88 3.30 2.72 2.32 2.13 S21 ANG 164.6 137.8 117.8 98.9 90.0 82.1 71.4 62.5 57.3 155.8 122.8 104.8 89.8 82.9 76.5 67.8 60.2 55.8 146.3 112.0 97.3 84.9 79.0 73.4 65.7 58.9 54.8 141.5 108.1 94.6 83.2 77.6 72.3 64.9 58.1 54.1 LIN MAG 0.025 0.064 0.086 0.104 0.114 0.124 0.140 0.157 0.171 0.023 0.052 0.068 0.091 0.107 0.124 0.149 0.175 0.194 0.020 0.043 0.062 0.089 0.108 0.127 0.156 0.184 0.203 0.019 0.041 0.060 0.089 0.109 0.128 0.157 0.185 0.205 S12 ANG 79.9 63.1 53.7 49.7 50.3 51.1 53.1 55.5 56.6 76.3 61.9 59.5 61.1 62.5 62.8 63.0 62.4 61.6 73.2 65.2 66.3 68.1 68.1 67.8 66.5 64.8 63.5 72.7 67.5 69.0 70.1 69.9 69.1 67.5 65.6 64.1 LIN MAG 0.978 0.859 0.736 0.642 0.618 0.603 0.577 0.560 0.558 0.934 0.711 0.580 0.518 0.515 0.510 0.494 0.483 0.481 0.869 0.597 0.496 0.465 0.473 0.473 0.461 0.452 0.450 0.832 0.560 0.475 0.456 0.466 0.469 0.456 0.448 0.446 S22 ANG -7.6 -19.3 -24.2 -25.3 -26.0 -28.0 -31.2 -33.9 -36.0 -12.7 -25.1 -25.6 -22.1 -22.2 -24.1 -27.3 -30.0 -32.6 -17.6 -26.0 -22.9 -18.1 -18.4 -20.6 -24.6 -27.4 -30.1 -19.4 -25.1 -20.9 -16.5 -17.1 -19.4 -23.4 -26.3 -29.2 Document Number 85033 Rev. 1.4, 29-Apr-05 www.vishay.com 3 BFR92A / BFR92AR / BFR92AW Vishay Semiconductors VCE/V IC/mA IC/mA f/MHz f/MHz 100 300 500 800 20 1000 1200 1500 1800 2000 100 300 500 800 2 1000 1200 1500 1800 10 2000 100 300 500 800 5 1000 1200 1500 1800 2000 100 300 500 800 10 1000 1200 1500 1800 2000 100 300 500 800 10 14 1000 LIN MAG 0.484 0.251 0.181 0.144 0.138 0.145 0.179 0.202 0.220 0.915 0.780 0.597 0.405 0.339 0.294 0.261 0.240 0.243 0.816 0.569 0.372 0.220 0.175 0.153 0.153 0.157 0.170 0.696 0.397 0.237 0.132 0.103 0.097 0.116 0.133 0.148 0.639 0.339 0.199 0.113 0.093 S11 ANG -52.5 -106.2 -141.8 -177.4 169.3 159.1 148.3 133.7 125.9 -16.2 -46.7 -71.2 -97.6 -113.1 -129.6 -155.8 179.2 163.2 -24.3 -62.7 -87.9 -114.2 -129.6 -145.8 -175.7 158.0 143.4 -33.7 -75.7 -101.2 -130.2 -149.3 -165.8 167.2 141.3 129.4 -38.8 -82.4 -110.0 -144.1 160.9 LIN MAG 24.55 11.67 7.37 4.70 3.82 3.26 2.67 2.28 2.10 6.32 5.56 4.57 3.37 2.87 2.53 2.13 1.84 1.70 12.50 9.15 6.55 4.41 3.63 3.13 2.59 2.22 2.04 18.83 11.20 7.41 4.81 3.92 3.35 2.76 2.36 2.16 21.41 11.61 7.52 4.83 3.93 S21 ANG 136.0 104.3 92.1 81.3 76.0 70.9 63.7 57.0 52.8 165.5 139.6 119.9 101.0 92.3 84.2 73.7 64.8 59.8 157.4 125.3 106.9 91.6 84.6 78.3 69.7 62.1 57.9 148.4 114.4 99.0 86.4 80.4 75.0 67.5 60.4 56.4 143.8 110.2 96.3 84.4 78.9 LIN MAG 0.018 0.039 0.058 0.088 0.108 0.127 0.157 0.185 0.205 0.020 0.054 0.073 0.089 0.098 0.107 0.121 0.136 0.149 0.019 0.044 0.059 0.079 0.093 0.107 0.129 0.152 0.168 0.017 0.038 0.054 0.078 0.094 0.111 0.136 0.160 0.178 0.016 0.036 0.053 0.077 0.094 S12 ANG 72.0 69.5 71.5 72.0 71.4 70.6 68.4 66.4 64.8 80.5 65.1 55.8 52.2 53.0 54.3 56.8 59.2 61.1 77.2 63.6 60.6 62.3 63.9 64.8 65.5 65.5 65.3 74.6 66.4 67.0 68.9 69.4 69.5 69.0 67.9 66.8 73.2 67.5 69.4 70.7 71.1 LIN MAG 0.788 0.531 0.466 0.456 0.469 0.472 0.461 0.453 0.452 0.981 0.883 0.778 0.692 0.677 0.663 0.643 0.630 0.630 0.947 0.761 0.647 0.592 0.590 0.589 0.576 0.567 0.567 0.896 0.666 0.577 0.553 0.560 0.561 0.551 0.545 0.549 0.866 0.636 0.562 0.549 0.556 S22 ANG -20.7 -22.8 -18.3 -14.4 -15.3 -18.1 -22.4 -25.4 -28.4 -6.2 -16.1 -20.4 -21.6 -22.4 -24.0 -27.0 -29.6 -31.4 -10.3 -20.5 -21.1 -18.8 -19.1 -20.8 -24.1 -26.6 -28.7 -13.8 -20.8 -18.6 -15.5 -16.0 -18.2 -21.9 -24.4 -27.1 -15.2 -19.8 -16.9 -14.2 -14.9 www.vishay.com 4 Document Number 85033 Rev. 1.4, 29-Apr-05 BFR92A / BFR92AR / BFR92AW Vishay Semiconductors VCE/V IC/mA IC/mA f/MHz f/MHz 1200 1500 1800 2000 100 300 500 800 20 1000 1200 1500 1800 2000 LIN MAG 0.090 0.118 0.137 0.155 0.576 0.286 0.177 0.113 0.101 0.107 0.136 0.160 0.181 S11 ANG 179.0 158.6 137.7 125.7 -45.8 -91.7 -123.1 -161.1 -177.3 168.1 152.5 133.1 124.2 LIN MAG 3.36 2.76 2.35 2.16 23.38 11.55 7.34 4.69 3.81 3.24 2.67 2.27 2.09 S21 ANG 73.7 66.4 59.5 55.6 138.5 106.1 93.4 82.2 77.1 72.0 64.8 58.1 54.0 LIN MAG 0.110 0.136 0.161 0.178 0.015 0.034 0.051 0.075 0.092 0.109 0.134 0.159 0.176 S12 ANG 70.5 69.8 68.4 67.4 72.0 69.0 71.3 72.4 72.4 71.9 70.9 69.5 68.4 LIN MAG 0.560 0.550 0.546 0.548 0.836 0.620 0.565 0.557 0.568 0.571 0.564 0.559 0.560 S22 ANG -17.3 -21.0 -24.0 -26.5 -15.8 -17.7 -14.7 -12.6 -13.8 -16.4 -20.4 -23.5 -25.9 Typical Characteristics (Tamb = 25 C unless otherwise specified) 300 250 200 150 100 50 0 0 96 12159 Ccb - Collector Base Capacitance ( pF ) Ptot -Total Power Dissipation ( mW ) 1.0 0.8 0.6 0.4 0.2 f = 1 MHz 0 0 4 8 12 16 20 V CB - Collector Base Voltage ( V ) 20 40 60 80 100 120 140 160 13585 Tamb - Ambient Temperature ( C ) Figure 1. Total Power Dissipation vs. Ambient Temperature Figure 3. Collector Base Capacitance vs. Collector Base Voltage f T - Transition Frequency ( MHz ) 6000 5000 F - Noise Figure ( dB ) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 5 10 15 20 25 30 12891 4000 3000 2000 1000 0 V CE = 10V f = 500 MHz V CE = 10 V f = 800 MHz Z S = 50 0 5 10 15 20 25 30 12889 I C - Collector Current ( mA ) I C - Collector Current ( mA ) Figure 2. Transition Frequency vs. Collector Current Figure 4. Noise Figure vs. Collector Current Document Number 85033 Rev. 1.4, 29-Apr-05 www.vishay.com 5 BFR92A / BFR92AR / BFR92AW Vishay Semiconductors VCE = 10 V, IC = 10 mA, Z0 = 50 S11 S12 j j0.5 j2 150 j0.2 2.0 GHz 90 120 2.0 GHz 1.5 60 j5 1.0 0.5 30 0 0.2 0.5 0.8 1 2 5 -j5 180 0.1 0.08 0.16 0 -j0.2 0.3 0.1 -150 -j2 -120 -90 -60 -30 -j0.5 13 526 -j 13 527 Figure 5. Input Reflection Coefficient Figure 7. Reverse Transmission Coefficient S21 S22 90 120 0.1 150 0.3 j 60 j0.5 30 j2 0.5 1.0 j0.2 j5 180 2.0 GHz 8 16 0 0 0.2 0.5 1 2 0.8 5 0.1 -j5 -j0.2 -150 -60 -90 -30 -j0.5 13 528 2.0 GHz -j2 -j -120 13 529 Figure 6. Forward Transmission Coefficient Figure 8. www.vishay.com 6 Document Number 85033 Rev. 1.4, 29-Apr-05 BFR92A / BFR92AR / BFR92AW Vishay Semiconductors Package Dimensions in mm (Inches) 1.15 (.045) 0.175 (.007) 0.098 (.005) 0.1 (.004) max. 0.4 (.016) 0.4 (.016) 2.6 (.102) 2.35 (.092) 0.95 (.037) ISO Method E 3.1 (.122) 2.8 (.110) 0.4 (.016) C 1.43 (.056) 1.20(.047) Mounting Pad Layout 0.52 (0.020) 0.9 (0.035) 2.0 (0.079) B 0.95 (.037) E 0.95 (.037) 0.95 (0.037) 0.95 (0.037) 9511346 Package Dimensions in mm (Inches) 1.15 (.045) 0.175 (.007) 0.098 (.005) 0.1 (.004) max. 0.4 (.016) 0.4 (.016) 2.6 (.102) 2.35 (.092) 0.95 (.037) ISO Method E 3.1 (.122) 2.8 (.110) 0.4 (.016) C 1.43 (.056) 1.20(.047) Mounting Pad Layout 0.52 (0.020) 0.9 (0.035) 2.0 (0.079) E 0.95 (.037) B 0.95 (.037) 0.95 (0.037) 0.95 (0.037) 9511347 Document Number 85033 Rev. 1.4, 29-Apr-05 www.vishay.com 7 BFR92A / BFR92AR / BFR92AW Vishay Semiconductors Package Dimensions in mm (Inches) 0.10 (0.004) 1.00 (0.039) 0.10 (0.004) SO Method E 10 Mounting Pad Layout 2.05 (0.080) 0.39 (0.015) 0.9 (0.035) 1.25 (0.049) 2.00 (0.078) 2.0 (0.079) 0.30 (0.012) 1.3 (0.051) 0.95 (0.37) 0.95 (0.037) 96 12236 www.vishay.com 8 Document Number 85033 Rev. 1.4, 29-Apr-05 BFR92A / BFR92AR / BFR92AW Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85033 Rev. 1.4, 29-Apr-05 www.vishay.com 9 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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